p-n junction diodes prepared in vapor-phase epitaxial ZnSe films using metallic Zn and Se
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4) , 1059-1061
- https://doi.org/10.1016/0022-0248(92)90913-4
Abstract
No abstract availableKeywords
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