Germanium film on SiO2 with a 〈100〉 texture deposited by the rf sputtering technique
- 15 November 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1059-1061
- https://doi.org/10.1063/1.96378
Abstract
Germanium (Ge) films on SiO2 with 〈100〉 texture deposited by a sputtering technique and the texture enhancement by a subsequent solid‐state thermal annealing are demonstrated for the first time. A 0.6‐μm‐thick Ge film on a surface oxidized Si wafer deposited by the rf sputtering technique at 600 °C produces a 〈100〉 texture, and the preferential orientation of the film is enhanced by a conventional grain growth process at 900 °C (approximately 0.95Tm, where Tm is the melting point in the Kelvin scale) for 1 h, while the crystallographic texture of the films has never changed at 650 °C (0.75Tm) annealing. The texture enhancement is interpreted by the existence of 〈100〉 oriented precursors and a simple coalescence and rearrangement model.Keywords
This publication has 10 references indexed in Scilit:
- Strong 〈100〉 texture formation of polycrystalline silicon films on amorphous insulator by laser recrystallizationApplied Physics Letters, 1984
- Graphoepitaxy of Ge on SiO2 by solid-state surface-energy-driven grain growthApplied Physics Letters, 1984
- Origin of oriented crystal growth of radiantly melted silicon on SiO2Applied Physics Letters, 1984
- Crystallographic orientation control of silicon stripes in SiO2 grooves using a new double laser annealing techniqueApplied Physics Letters, 1984
- Influence of as-deposited film structure on 〈100〉 texture in laser-recrystallized silicon on fused quartzApplied Physics Letters, 1984
- Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation ControlMRS Proceedings, 1984
- Graphoepitaxy of silicon on fused silica using surface micropatterns and laser crystallizationJournal of Vacuum Science and Technology, 1979
- Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallizationApplied Physics Letters, 1979
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Optical Investigation of Different Silicon FilmsJournal of the Electrochemical Society, 1974