In situ stress measurement of chemical vapor deposited tungsten silicides

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Abstract
Peeling is a serious problem in chemical vapor deposited (CVD) tungsten silicide (WSix). In situ stress measurement during annealing is performed for sputtered and CVD WSix films at temperatures of 25–900 °C. In monosilane reduced CVD WSix, intrinsic stress increases abruptly at 400 °C and reaches a maximum of 7.8×108 Pa at 450 °C. However, such abrupt stress changes are not found at low temperatures in sputtered and dichlorosilane reduced CVD films. Abrupt stress change appeared in monosilane WSix at 400–450 °C, which is a cause of peeling during annealing, may be due to the grain growth of hexagonal and tetragonal WSi2 grains.