Direct imaging of the columnar structure of GaAs quantum wells

This publication has 12 references indexed in Scilit:

• Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption
  Superlattices and Microstructures, 1987
• NONCOMMUTATIVE STRUCTURE OF GaAs QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPORATION
  Le Journal de Physique Colloques, 1987
• Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)
  Journal of Vacuum Science & Technology B, 1986
• Well defined superlattice structures made by phase-locked epitary using RHEED intensity oscillations
  Superlattices and Microstructures, 1985
• Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms
  Journal of Vacuum Science & Technology B, 1985
• Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities
  Physical Review B, 1985
• One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1985
• Localization induced electron-hole transition rate enhancement in GaAs quantum wells
  Applied Physics Letters, 1984
• Dynamics of film growth of GaAs by MBE from Rheed observations
  Applied Physics A, 1983
• Cathodoluminescence lifetime pattern of GaAs surfaces around dislocations
  Journal of Luminescence, 1981