Metalorganic chemical vapor deposition and photoluminescence of nm GaAs doping superlattices
- 15 August 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (4) , 1696-1697
- https://doi.org/10.1063/1.336039
Abstract
Metalorganic chemical vapor deposition of ultrathin doped GaAs multilayer structures is reported. Low-temperature photoluminescence is used as a powerful characterization method. By observing the shift of the effective band gap with varying layer thickness of doping superlattices we demonstrate that highly doped layers which are separated by only 4 nm do not diffuse together during growth.This publication has 9 references indexed in Scilit:
- Photoluminescence of InP Doping Superlattice Grown by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1984
- A critical comparison of MOCVD and MBE for heterojunction devicesJournal of Crystal Growth, 1984
- Modulation of electronic properties in liquid phase epitaxially grown p-n-p-n GaAs multilayersJournal of Electronic Materials, 1984
- Study of time-resolved luminescence in GaAs doping superlatticesPhysical Review B, 1983
- Electronic structure of semiconductors with doping superlatticesPhysical Review B, 1983
- Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlatticesSolid State Communications, 1982
- Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs SuperlatticePhysical Review Letters, 1981
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1981
- A majority-carrier camel diodeApplied Physics Letters, 1979