Electrical Studies of Rapidly Annealed Ni and Pd/n-GaAs Schottky Diodes
- 1 May 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (5R)
- https://doi.org/10.1143/jjap.34.2247
Abstract
The effects of rapid thermal annealing 1-100 s on the electrical characteristics of Ni and Pd contacts on n-GaAs are studied. At annealing temperature (Ta) of 300° C and 450° C the contacts remained quite stable. At annealing temperature of 600° C the contacts showed sign of degradation if they are annealed for more than 40 s. Degradation in Pd contacts was more pronounced than in Ni contacts. Consumption of GaAs and formation of different reactions at the interface, resulting in a layer containing defects and inhomogeneity are used to explain the observations.Keywords
This publication has 17 references indexed in Scilit:
- Annealing studies on Pd/n-GaAs Schottky diodesSemiconductor Science and Technology, 1991
- Amorphous phase formation in an as-deposited platinum-GaAs interfaceApplied Physics Letters, 1991
- Thermal stability of silicide contacts on GaAs using the proximity technique during rapid thermal annealingSemiconductor Science and Technology, 1991
- Low Barrier Height and Nonuniformity in Al Schottky Contacts on Chemically Etched n-GaAsJapanese Journal of Applied Physics, 1988
- Ohmic contacts to n-GaAs using In/Pd metallizationApplied Physics Letters, 1987
- Structure and composition of NixGaAsApplied Physics Letters, 1986
- Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phasesThin Solid Films, 1986
- Reactions of Pd on (100) and (110) GaAs surfacesJournal of Applied Physics, 1985
- Reaction rates for Pt on GaAsApplied Physics Letters, 1974
- GaAs Schottky diodes with linear log I/V behaviour over eight decades of currentElectronics Letters, 1968