Mesa-sidewall gate leakage in InAlAs/InGaAs heterostructure field-effect transistors
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (9) , 2037-2043
- https://doi.org/10.1109/16.155875
Abstract
No abstract availableKeywords
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