Ultra-thin gate oxide growth on hydrogen-terminated silicon surfaces
- 31 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 3-9
- https://doi.org/10.1016/0167-9317(93)90121-k
Abstract
No abstract availableKeywords
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- The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etchingJournal of Applied Physics, 1988