Plasma-Grown Oxide on InP
- 1 March 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (3) , L211
- https://doi.org/10.1143/jjap.20.l211
Abstract
A plasma oxidation of InP has been realized for the first time. The resistivity of the plasma-grown oxide is about 6×109 Ω cm, and the dielectric breakdown strength is in the range of 0.5–1×106 V cm-1. The electrical characteristics of the surface states at the plasma-grown oxide-type InP interface have been investigated using MOS capacitors, which yield a surface state distribution having a minimum density of 1–3×1011 cm-2 eV-1.Keywords
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