Molecular thin film transistors with a subthreshold swing of 100 mV/decade
- 22 March 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We have developed a molecular thin film transistor concept based on a high-mobility organic semiconductor (pentacene) and an ultra-thin, molecular self-assembling monolayer (SAM) gate dielectric. These transistors operate at voltages between 1 and 3 V, with a subthreshold swing as low as 100 mV/decade. For a transistor with a channel length of 5 /spl mu/m, we have measured a transconductance of 0.01 /spl mu/S//spl mu/m, to our knowledge the largest transconductance reported for an organic semiconductor device.Keywords
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