Surface-Barrier Formation for A1 Chemisorbed on GaAs(110)
- 16 April 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (16) , 1094-1097
- https://doi.org/10.1103/physrevlett.42.1094
Abstract
Using a localized orbital theory, we have studied the electronic and electrical properties of A1 chemisorbed on GaAs(110). We find that both the microscopic data and the macroscopic induced barrier are fully explained by the electronic structure of a new Al-As-Ga complex on the surface. This complex results from an exchange reaction in which Al replaces the surface Ga and an unexpected structural relaxation induced by the chemisorption of the metal.Keywords
This publication has 13 references indexed in Scilit:
- Energy-Minimization Approach to the Atomic Geometry of Semiconductor SurfacesPhysical Review Letters, 1978
- (110) surface states of GaAs: Sensitivity of electronic structure to surface structurePhysical Review B, 1978
- Electronic states at unrelaxed and relaxed GaAs (110) surfacesPhysical Review B, 1978
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- Electronic structure of Al chemisorbed on the Si (111) surfacePhysical Review B, 1977
- Coupled Interface Plasmons of Al Films on CdSe and CdSPhysical Review Letters, 1977
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976
- Self-Consistent Pseudopotential Calculation for a Metal-Semiconductor InterfacePhysical Review Letters, 1975
- Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopyPhysical Review B, 1974
- FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDSPhysical Review Letters, 1969