Resonant Raman scattering in Ga(As, P) mediated by (localized exciton-LO phonon) complex
- 1 January 1982
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 43 (6) , 973-976
- https://doi.org/10.1051/jphys:01982004306097300
Abstract
Resonance light scattering experiments in polar crystals at energies corresponding to Eex + nħωLO have suggested that dressed excitons are the relevant intermediate states. Configuration coordinate model is applied to calculate the resonance Raman spectrum (intensity of phonons lines as a function of incident frequency) of the mixed crystal GaAs 0.2P0.8 and compared with experimental results of Oueslati, Hirlimann and Balkanski (J. Physique 42 (1981) 1151-1156). This analysis gives coupling constants V1 and V2 of a localized exciton with the LO1 phonon and the LO2 phonon respectively : V1/ħωLO1 = 0.7 ± 0.2; V2/ ħωLO2 = 1.4 ± 0.3, and exciton energy E0 = 2.442 eV with its width γ = 0.030 eVKeywords
This publication has 8 references indexed in Scilit:
- Evidence for Exciton Localization by Alloy Fluctuations in Indirect-GapPhysical Review Letters, 1980
- Localized exciton-phonon complex as an intermediate state in light scatteringSolid State Communications, 1978
- The theory and properties of randomly disordered crystals and related physical systemsReviews of Modern Physics, 1974
- Cascade Theory of Inelastic Scattering of LightPhysical Review Letters, 1971
- Long wavelength optical phonons in mixed crystalsAdvances in Physics, 1971
- Raman Scattering in Resonance with the Exciton Transition in Pure Polar CrystalsPhysical Review Letters, 1970
- Resonant Raman Effect in SemiconductorsPhysical Review B, 1969
- Shapes of Impurity Absorption Bands in SolidsPhysical Review B, 1965