The effective-mass Hamiltonian for abrupt heterostructures
- 30 December 1988
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 21 (36) , L1193-L1198
- https://doi.org/10.1088/0022-3719/21/36/001
Abstract
The effective-mass Hamiltonian H=1/2malpha pmbeta pmalpha +Vc+ upsilon for non-homogeneous semiconductors is studied. Here m is the position-dependent effective mass, 2 alpha + beta =-1. Vc is the position-dependent conduction band edge and upsilon is a localised potential. Through an exact model calculation the authors show that when effective-mass theory is applicable, alpha =0 and beta =-1,.Keywords
This publication has 21 references indexed in Scilit:
- Shallow impurities in semiconductor quantum wellsPhysica B+C, 1987
- Optical constants of GaAs-As superlattices and multiple quantum wellsPhysical Review B, 1986
- k→⋅p→theory, effective-mass approach, and spin splitting for two-dimensional electrons in GaAs-GaAlAs heterostructuresPhysical Review B, 1985
- Electron energy levels in GaAs-heterojunctionsPhysical Review B, 1984
- Subbands and charge control in a two-dimensional electron gas field-effect transistorApplied Physics Letters, 1984
- Variational calculations on a quantum well in an electric fieldPhysical Review B, 1983
- Superlattice band structure in the envelope-function approximationPhysical Review B, 1981
- Electronic States in Perturbed Periodic SystemsPhysical Review B, 1949
- Electrons in Perturbed Periodic LatticesPhysical Review B, 1949
- The Structure of Electronic Excitation Levels in Insulating CrystalsPhysical Review B, 1937