XPS study of the InxGa1−xAsGaAs superlattice
- 9 December 1994
- journal article
- Published by Elsevier in Journal of Electron Spectroscopy and Related Phenomena
- Vol. 70 (2) , 145-149
- https://doi.org/10.1016/0368-2048(94)02225-o
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Depth resolution for AES sputter profiles of GaAs/GaInAs strained superlatticesApplied Surface Science, 1993
- Depth profiling of InxGa1-xAs/GaAs superlatticeApplied Surface Science, 1993
- MBE growth optimization of InyGa1-yAs/GaAs multiple quantum well structuresJournal of Crystal Growth, 1993
- Surface segregation of In atoms and its influence on the quantized levels in InGaAs/GaAs quantum wellsJournal of Crystal Growth, 1993
- AES sputter depth profiles applied to interface analysis of GaInAs/InP grown by atmospheric pressure MOCVDApplied Surface Science, 1990
- Determination of depth resolution from measured sputtering profiles of multilayer structures: Equations and approximationsSurface and Interface Analysis, 1986
- Material properties and optical guiding in InGaAs-GaAs strained layer superlattices—a brief reviewSolid-State Electronics, 1986
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Depth profiling by SIMS—depth resolution, dynamic range and sensitivitySurface and Interface Analysis, 1982
- Depth resolution in composition profiles by ion sputtering and surface analysis for single-layer and multilayer structures on real substratesThin Solid Films, 1981