Numerical simulation of molten silicon flow; comparison with experiment
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 114 (4) , 715-725
- https://doi.org/10.1016/0022-0248(91)90421-z
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Flow instability of molten silicon in the Czochralski configurationJournal of Crystal Growth, 1990
- Numerical simulation of crystal growth: Influence of melt convection on global heat transfer and interface shapeJournal of Crystal Growth, 1990
- Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth methodJournal of Crystal Growth, 1988
- Numerical calculation of the global heat transfer in a Czochralski furnaceJournal of Crystal Growth, 1986
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growthJournal of Crystal Growth, 1986
- A parameter sensitivity study for Czochralski bulk flow of siliconJournal of Crystal Growth, 1982
- Numerical simulation of free and forced convection in the classical Czochralski method and in CACRTJournal of Crystal Growth, 1982
- Convective effects in crystals grown from meltJournal of Crystal Growth, 1981
- Convective temperature oscillations in molten galliumJournal of Fluid Mechanics, 1974
- The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski MethodJapanese Journal of Applied Physics, 1970