Stress and Structural Relaxation in Metallo-Organic Chemical Vapor Deposited SiO2 Films
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12B) , L2123
- https://doi.org/10.1143/jjap.30.l2123
Abstract
Stress relaxation of amorphous silica films deposited by low pressure thermal decomposition of diacetoxy di-t-butoxy silane (DADBS) was studied. Significant reduction in film stress along with structural changes were observed at temperatures as low as 600°C. The activation energy for stress relaxation was found to be 75.8 kJ/mol. The low value of activation energy is attributed to the effect of water which was present in the form of silanol groups. The changes in film stress are attributed in a semi-quantitative manner to the changes in Si-O-Si angle distributions in the film.Keywords
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