Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4B) , L468-470
- https://doi.org/10.1143/jjap.35.l468
Abstract
A Si-doped GaN layer was grown by MOVPE (metal-organic vapor phase epitaxy) using tetraethylsilane (TeESi) as the dopant. The Hall effect was studied between 11 K and 300 K. The electron concentration was observed to increase with the increase in the TeESi flow rate. The activation energy E D for ionization of shallow donors was determined to be 27 meV.Keywords
This publication has 8 references indexed in Scilit:
- Electron Hall mobility of n-GaNApplied Physics Letters, 1995
- Silicon doping of GaN using disilaneApplied Physics Letters, 1995
- Si-doping in GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tetraethylsilaneJournal of Crystal Growth, 1994
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1994
- Si- and Ge-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1992
- Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPEJournal of Crystal Growth, 1991
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969