Si-doping in GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tetraethylsilane
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 408-413
- https://doi.org/10.1016/0022-0248(94)91084-7
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Differences in Si doping efficiency in tertiarybutylarsine, monoethylarsine and arsine for GaAs and AlGaAs grown by MOVPEJournal of Electronic Materials, 1992
- Heavily Si-doped GaAs grown by low-pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silaneApplied Physics Letters, 1992
- Effective Si planar doping of GaAs by MOVPE using tertiarybutylarsineJournal of Crystal Growth, 1991
- MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactorJournal of Crystal Growth, 1991
- Control of residual impurity incorporation in tertiarybutylarsine-grown GaAsJournal of Crystal Growth, 1991
- GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsineApplied Physics Letters, 1989
- BH lasers with GaInAsP and GaInAs active layers grown by MOVPE using tertiarybutylarsine and tertiarybutylphosphineElectronics Letters, 1989
- High-quality GaInAs photodiodes grown using tertiarybutylarsine by atmospheric-pressure MOVPEElectronics Letters, 1989
- Tertiary butylarsine grown GaAs solar cellApplied Physics Letters, 1989
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987