Rapid photo-deposition of silicon dioxide filmsusing 172 nm VUV light
- 31 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (7) , 606-608
- https://doi.org/10.1049/el:19940412
Abstract
A new method is presented for the rapid direct photo-deposition of silicon dioxide using silane and oxygen mixtures and 172 nm radiation generated from a xenon excimer lamp. The growth rates obtained reach 500 Å/min at 300°C, some 200% faster than previously achieved using either low temperature CVD or traditional optical sources.Keywords
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