Growth of SiO2 thin film by double-excitation photoinduced chemical vapor deposition incorporated with microwave excitation of oxygen

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Abstract
A new technology for low‐temperature growth of good‐quality silicon dioxide (SiO2) thin films has been developed. The film growth technology is a double‐excitation photoinduced chemical vapor deposition using vacuum ultraviolet and ultraviolet lights from source gases of Si2H6 and microwave‐excited O2 in the substrate temperature region of 25–300 °C. Growth rate is about 140 Å/min at 25 °C and does not change with the substrate temperature. Infrared absorption peak of the Si H bond completely disappears in the films deposited even at 25 °C. The interface state density is extremely low and its minimum density is 7×1010 cm−2 eV−1 for the film deposited at 100 °C. The reaction and deposition mechanisms are discussed from mass spectroscopic analysis. O3 molecules are increased by the microwave excitation of O2 and chemically active oxygen radicals are produced by the irradiation of the D2 and Hg lamps. Si2OH5, SiH2, and H2 molecules are also increased by either the photo‐ or microwave excitation, but H2O and OH are not increased.

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