Electron self-trapping in SiO2

Publisher Website
Google Scholar
Abstract
Electron trapping and detrapping behavior of SiO2 has been studied at different temperatures by applying avalanche injection technique to metal oxide semiconductor capacitors. Experimental evidence is presented for the transfer of electrons initially captured at 100 K by shallow centers with σ≂10−16 cm2 to the deep centers with σ≂10−19 cm2. The trapping sites with σ−16 cm2 that are located near Si‐SiO2 interface exhibit the highest probability of charge transfer. The centers with σ>10−16 cm2 show no transfer of charge. It is proposed that the electrons localized at 100 K by the centers with σ≤10−16 cm2 undergo a self‐trapping process that is triggered by a lattice relaxation. The lattice relaxation seems to be encouraged by the strain in the interfacial region.