Analysis of AlGaAs/GaAs solar cell structures by optical reflectance spectroscopy
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (2) , 450-454
- https://doi.org/10.1109/16.46382
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Device processing and analysis of high efficiency GaAs cellsSolar Cells, 1988
- Variable angle spectroscopic ellipsometry: Application to GaAs-AlGaAs multilayer homogeneity characterizationJournal of Applied Physics, 1988
- Nondestructive analysis of silicon-on-insulator wafersApplied Physics Letters, 1987
- Analysis of buried layers from high dose oxygen ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- Interface analysis by spectroscopic ellipsometry of Ga1−xAlxAs-GaAs heterojunctions grown by metal organic vapor phase epitaxyApplied Physics Letters, 1983
- Optimum design for window layer thickness of GaAlAs-GaAs heteroface solar cell regarding the effect of reflection lossJournal of Applied Physics, 1981
- Optical Properties of GaAs and Its Electrochemically Grown Anodic Oxide from 1.5 to 6.0 eVJournal of the Electrochemical Society, 1981
- Polycrystalline silicon film thickness measurement from analysis of visible reflectance spectraJournal of the Optical Society of America, 1979
- Computations in thin film opticsVacuum, 1954