Outdiffusion and diffusion mechanism of oxygen in silicon
- 1 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9) , 1001-1003
- https://doi.org/10.1063/1.95969
Abstract
The outdiffusion profiles of oxygen in Czochralski Si(111) within the temperature range 700–1160 °C and for three processing conditions (nitrogen atmosphere, steam oxidation, and phosphorus indiffusion) were measured by secondary ion mass spectrometry. The diffusivity and solubility of oxygen in Si were determined by fitting these profiles to a simple diffusion model. Oxygen diffusivity shows little or no dependence on processing conditions and can be expressed as D=0.14 exp(−2.53 eV/kT) cm2 s−1 for the temperature range studied. Our observations show that point defects in Si have little effect on oxygen diffusion and demonstrate that oxygen diffuses primarily via an interstitial mechanism. Oxygen solubility was the largest during steam oxidation.Keywords
This publication has 13 references indexed in Scilit:
- Silicon self-interstitial supersaturation during phosphorus diffusionApplied Physics Letters, 1983
- The effects of processing conditions on the out-diffusion of oxygen from Czochralski siliconJournal of Applied Physics, 1983
- Diffusivity of oxygen in silicon at the donor formation temperatureApplied Physics Letters, 1983
- Diffusion of oxygen in siliconJournal of Applied Physics, 1982
- Oxidation‐Induced Point Defects in SiliconJournal of the Electrochemical Society, 1982
- Diffusivity of oxygen in silicon during steam oxidationApplied Physics Letters, 1982
- Interstitial supersaturation near phosphorus-diffused emitter zones in siliconApplied Physics Letters, 1979
- Oxidation-enhanced diffusion of arsenic and phosphorus in near-intrinsic 〈100〉 siliconApplied Physics Letters, 1978
- A Quantitative Model for the Diffusion of Phosphorus in Silicon and the Emitter Dip EffectJournal of the Electrochemical Society, 1977
- Electrical and Optical Properties of Heat-Treated SiliconPhysical Review B, 1957