Zn diffusion enhancement of interdiffusion in a GaAs-InGaPAs heterostructure
- 5 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (23) , 2299-2301
- https://doi.org/10.1063/1.100259
Abstract
The influence of concurrent Zn diffusion on the interdiffusion in an In0.06Ga0.94P0.05As0.95-GaAs heterostructure grown by liquid phase epitaxy was investigated. A 25 h, 700 °C diffusion anneal was performed using an equilibrium ternary diffusion source and profiles of In and P were measured with secondary-ion mass spectrometry. The Zn diffusion selectively enhances the cation (In-Ga) interdiffusion; with concurrent Zn diffusion, the interdiffusion coefficient for the In-Ga components is ≊5×10−14 cm2/s, as compared to ≊6×10−16 cm2/s for anions (As-P). A kick-out mechanism is proposed to explain the results.Keywords
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