Transient annealing for the production of n+ contact layers in GaAs
- 1 January 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (1-2) , 325-329
- https://doi.org/10.1016/0168-583x(85)90653-6
Abstract
No abstract availableKeywords
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