Detailed analysis of edge effects in SIMOX-MOS transistors

This publication has 11 references indexed in Scilit:

• Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator
  IEEE Transactions on Electron Devices, 1991
• Interface coupling effects in thin silicon-on-insulator MOSFET's
  Superlattices and Microstructures, 1990
• Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation
  IEEE Transactions on Electron Devices, 1989
• Measurement and modeling of the sidewall threshold voltage of mesa-isolated SOI MOSFETs
  IEEE Transactions on Electron Devices, 1989
• Gate Oxide Breakdown in a SOI CMOS Process Using MESA Isolation
  Published by Springer Nature ,1989
• Advanced Silicon on Insulator Materials: Processing, Characterization and Devices
  Published by Springer Nature ,1989
• SILO isolation technique: A study of active and parasitic device characteristics with semi-recessed and fully-recessed field oxides
  Solid-State Electronics, 1988
• Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
  IEEE Electron Device Letters, 1987
• Interface states under LOCOS bird's beak region
  Solid-State Electronics, 1987
• Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface states
  IEEE Transactions on Electron Devices, 1984