Phosphorus incorporation in GaAsP grown by remote-plasma MOCVD
- 1 January 1989
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (1) , 91-94
- https://doi.org/10.1007/bf02655350
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Plasma-controlled deposition of GaAs and GaAsP by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Growth of GeSi/Si strained-layer superlattices using limited reaction processingJournal of Applied Physics, 1987
- Solid composition of GaAs1-xPx grown by organometallic vapour phase epitaxyJournal of Crystal Growth, 1987
- Plasma-enhanced metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1987
- Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductorsJournal of Crystal Growth, 1986
- AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVDJapanese Journal of Applied Physics, 1985
- Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor depositionJournal of Applied Physics, 1985
- MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layersElectronics Letters, 1984
- Fundamental mechanisms in silane plasma decompositions and amorphous silicon depositionJournal of Non-Crystalline Solids, 1983
- Thermodynamic aspects of organometallic vapor phase epitaxyJournal of Crystal Growth, 1983