Selective and shadow masked MOVPE growth of InP/InGaAs(P) heterostructures and quantum wells
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 497-501
- https://doi.org/10.1016/0022-0248(92)90506-e
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Optical and electrical properties of InP/InGaAs grown selectively on SiO2-masked InPApplied Physics Letters, 1991
- Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopyJournal of Crystal Growth, 1991
- Growth velocity variations during metalorganic vapor phase epitaxy through an epitaxial shadow maskApplied Physics Letters, 1990