Role of space charge in scanned probe oxidation
- 15 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (12) , 6891-6900
- https://doi.org/10.1063/1.368986
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated siliconJournal of Applied Physics, 1998
- Evaluation of scanning Maxwell-stress microscopy for SPM-based nanoelectronicsNanotechnology, 1997
- Current-dependent silicon oxide growth during scannedprobe lithographyElectronics Letters, 1996
- Device Fabrication by Scanned Probe OxidationScience, 1995
- Mechanisms of surface anodization produced by scanning probe microscopesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance MeasurementsJournal of the Electrochemical Society, 1995
- Control of Current in 2DEG Channel by Oxide Wire Formed Using AFMJapanese Journal of Applied Physics, 1995
- Silicon dioxide breakdown lifetime enhancement under bipolar bias conditionsIEEE Transactions on Electron Devices, 1993
- Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime: II . Physical MechanismsJournal of the Electrochemical Society, 1985
- On the Oxidation Kinetics of Silicon: The Role of WaterJournal of the Electrochemical Society, 1980