Crystal growth of CuInSe2 single crystals by synthesis solute diffusion method with controlling the growth rate
- 1 April 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 224 (1-2) , 95-100
- https://doi.org/10.1016/s0022-0248(01)00768-0
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Phase diagram of the Sb2Se3-CuInSe2 pseudobinary system and flux growth of CuInSe2 single crystalsJournal of Materials Science, 2000
- Single crystal growth of CuInSe2 by selenization horizontal Bridgman methodJournal of Crystal Growth, 1996
- Solution growth of CuInSe2 from CuSe solutionsJournal of Crystal Growth, 1995
- Electrical and Optical Properties of CuInSe 2 Single Crystals Prepared by Three-Temperature-Horizontal Bridgman MethodJapanese Journal of Applied Physics, 1995
- Crystal growth of CuInSe2 by the method of horizontal Bridgman with two temperature zonesJournal of Crystal Growth, 1993
- THM growth and properties of CuInSe2 single crystalsJournal of Crystal Growth, 1992
- Flux Growth of CuInS2 from Cu x In1 − x MeltsJournal of the Electrochemical Society, 1989
- Growth of InP single crystals by growth-rate controlled synthesis, solute diffusion techniqueJournal of Crystal Growth, 1984
- Growth of InP crystals by the synthesis, solute diffusion methodJournal of Crystal Growth, 1978
- A new method of growing GaP crystals for light-emitting diodesProceedings of the IEEE, 1973