Observation of deviation of electronic behaviour of indium tin oxide film at grain boundary using Scanning Tunneling Microscope
- 1 March 1997
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 101 (11) , 831-834
- https://doi.org/10.1016/s0038-1098(96)00684-9
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Two-dimensional profiling of shallow junctions in Si metal-oxide-semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopyJournal of Applied Physics, 1996
- Ambient scanning tunneling spectroscopy of n- and p-type gallium arsenideApplied Physics Letters, 1993
- Scanning tunneling microscopy and spectroscopy of Si/SiGe(001) superlatticesApplied Physics Letters, 1992
- Measurements of the three-dimensional impurity profile in Si using chemical etching and scanning tunneling microscopyApplied Physics Letters, 1991
- Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metalsPhysical Review Letters, 1991
- Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs-AlGaAs interfacesApplied Physics Letters, 1990
- Scanning tunneling spectroscopy of oxygen adsorbates on the GaAs(110) surfaceJournal of Vacuum Science & Technology B, 1988
- Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen-terminated silicon surfacesJournal of Vacuum Science & Technology A, 1988
- Atom-selective imaging of the GaAs(110) surfacePhysical Review Letters, 1987
- Surface Electronic Structure of Si (111)-(7×7) Resolved in Real SpacePhysical Review Letters, 1986