A mathematical representation of a modified stagnation flow reactor for MOCVD applications
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 491-498
- https://doi.org/10.1016/0022-0248(91)90226-u
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Micro-reaction engineering applications of reaction engineering to processing of electronic and photonic materialsChemical Engineering Science, 1987
- Complex flow phenomena in MOCVD reactorsJournal of Crystal Growth, 1986
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- Numerical Analysis of the Transport Phenomena in MOCVD ProcessJapanese Journal of Applied Physics, 1985
- Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor DepositionJournal of the Electrochemical Society, 1985
- Heat and mass transfer in horizontal vapor phase epitaxy reactorsJournal of Crystal Growth, 1984
- A flow channel reactor for GaAs vapor phase epitaxyJournal of Crystal Growth, 1982
- Heterogeneous kinetics and mass transport in chemical vapour deposition processes: Part II application to silicon epitaxyProgress in Crystal Growth and Characterization, 1981
- Analysis of Transport Processes in Vertical Cylinder Epitaxy ReactorsJournal of the Electrochemical Society, 1977
- Hydrodynamic description of CVD processesThin Solid Films, 1977