High electron mobility in (InAs)n(GaAs)n short period superlattices grown by MOVPE for high-electron mobility transistor structure
- 1 February 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (2) , 141-146
- https://doi.org/10.1007/bf02655260
Abstract
No abstract availableKeywords
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