Amorphous semiconductor heterojunctions: Technological impact
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 507-517
- https://doi.org/10.1016/0039-6028(86)90880-0
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Electronic structure of hydrogenated and unhydrogenated amorphous: A photoemission studyPhysical Review B, 1984
- Detection of hydrogen induced Schottky barrier modulation in Pd/SiOx/a-Si:H diodes by photoemission with synchrotron radiationApplied Physics Letters, 1984
- Photoemission studies of a-SixC1−x:H/a-Si and a-SixC1−x:H/ hydrogenated amorphous silicon heterojunctionsApplied Physics Letters, 1984
- New device applications of bandedge discontinuities in multilayer heterojunction structuresSurface Science, 1983
- Microscopic investigations of semiconductor interfacesSolid-State Electronics, 1983
- a-SiC:H/a-Si:H heterojunction solar cell having more than 7.1% conversion efficiencyApplied Physics Letters, 1981
- Hydrogen sensitive mos-structuresSensors and Actuators, 1981
- Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunctionApplied Physics Letters, 1978