Effect of gate-field dependent mobility degradation on distortion analysis in MOSFETs
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (11) , 2044-2052
- https://doi.org/10.1109/16.641382
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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