Improved performance of laterally oxidized GaInP/AlGaInP lasers by thermal annealing
- 12 May 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (19) , 2493-2495
- https://doi.org/10.1063/1.118900
Abstract
The improvement of efficiency and threshold of visible AlGaInP/GaInP laser diodes, which use buried AlAs native oxides for carrier and optical confinement, is described. Annealing of completed laser bars in an inert atmosphere lowers the threshold current and dramatically increases the external differential quantum efficiency. The characteristic temperature of the devices also increases from 74.8 to 125 K, indicating that the electron confinement is greatly enhanced in the annealed lasers, resulting in the observed improved performance. Secondary-ion mass spectrometry measurements reveal a reduction in hydrogen concentration in the laser cladding regions. This suggests that the improved electron confinement can be attributed to increased acceptor activation due to reduced hydrogen passivation.Keywords
This publication has 12 references indexed in Scilit:
- Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAsJournal of Applied Physics, 1996
- Double injection and negative resistance in stripe-geometry oxide-aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodesApplied Physics Letters, 1996
- High performance 660 nm InGaP/AIGaInP quantum wellmetal cladding ridge waveguide laser diodeElectronics Letters, 1996
- Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxideIEEE Photonics Technology Letters, 1996
- Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxyJournal of Electronic Materials, 1995
- Selectively oxidised vertical cavity surface emittinglaserswith 50% power conversion efficiencyElectronics Letters, 1995
- Native-oxide defined ring contact for low threshold vertical-cavity lasersApplied Physics Letters, 1994
- Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodesIEEE Journal of Quantum Electronics, 1994
- Native oxide top- and bottom-confined narrow stripe p-n AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure laserApplied Physics Letters, 1993
- Activation of Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour depositionElectronics Letters, 1992