Radiation Hardening of CMOS Technologies - AN Overview

1 January 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 24 (6) , 2043-2046
https://doi.org/10.1109/tns.1977.4329161

Abstract

The current status of four technologies for manufacturing radiation-hardened complementary metal-oxide-semiconductor integrated circuits is presented. The technologies include both aluminum-gate and silicon-gate CMOS structures formed on bulk-silicon and on silicon-on-sapphire (SOS) substrates. The hardness levels achieved on large-scale integrated circuits fabricated in each of these technologies is given. In addition some historical background is included.

Keywords

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