InGaAsP/InP planar buried heterostructure lasers with semi-insulating InP current blocking layers grown by MOCVD
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (6) , 943-947
- https://doi.org/10.1109/jqe.1987.1073452
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
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