Monte Carlo calculation of electronic noise in semiconductors
- 1 August 1991
- journal article
- Published by Elsevier in Computer Physics Communications
- Vol. 67 (1) , 135-143
- https://doi.org/10.1016/0010-4655(91)90226-b
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Monte Carlo method for the simulation of electronic noise in semiconductorsPhysical Review B, 1990
- Field-dependent conductivity of lightly doped p-Si at 77 KJournal of Applied Physics, 1989
- Monte Carlo particle investigation of noise in short n + - n-n + GaAs diodesElectronics Letters, 1988
- Generalization of Nyquist-Einstein relationship to conditions far from equilibrium in nondegenerate semiconductorsPhysical Review Letters, 1988
- Monte Carlo algorithm for generation-recombination noise in semiconductorsApplied Physics Letters, 1987
- Noise current spectrum in submicrometer samplesApplied Physics A, 1986
- Diffusion coefficient of holes in silicon by Monte Carlo simulationJournal of Applied Physics, 1986
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Application of Monte Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting componentsSolid-State Electronics, 1980
- Fluctuations from the Nonequilibrium Steady StateReviews of Modern Physics, 1960