Field-dependent conductivity of lightly doped p-Si at 77 K

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Abstract
A theoretical investigation and new experiments on the conductivity of lightly doped p‐Si (boron) at 77 K are presented. The conductivity is studied as a function of the electric field in the range 10<E4 V/cm. The experimental results are interpreted within an original Monto Carlo simulation which includes the mechanism of generation and recombination from impurity centers, thus allowing a simultaneous calculation of the mobility and the fraction of ionized impurities. The good agreement between the theory and the experiments supports the reliability of the physical model suggested.