Rapid thermal annealing of indium-implanted silicon single crystals

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Abstract
Rapid thermal annealing of indium-implanted 〈100〉 silicon single crystals has been studied as a function of anneal time and temperature (5–25 s, 685–1060 °C) for two implanted In concentrations (6×1019 and 1.2×1020 cm−3). The combination of Rutherford backscattering spectrometry/channeling and transmission electron microscopy was used to characterize the crystals after annealing. There is found to be a correlation between the In redistribution processes and the dislocation structure. The In peak centered at the crystalline/amorphous interface after rapid thermal annealing at 800 °C is concluded to be due to pipe diffusion. The direct backscattering of α particles from dislocation cores is discussed, and it is demonstrated that maximum backscattering from the dislocation core in a silicon crystal is obtained for the Burgers vector orthogonal to the direction of the incoming beam.