Properties of high-voltage silicon epitaxial diodes
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9) , 3930-3933
- https://doi.org/10.1063/1.1663889
Abstract
Multilayer Si‐epitaxial junctions are described with theoretically limited breakdown voltages as high as 1800 V over moderate areas using a vertical mesa configuration. The diodes were grown by the dichlorosilane method on heavily doped substrates. X‐ray topography shows the misfit dislocations as lying mostly in the interface region between the substrate and the epitaxial layer.This publication has 12 references indexed in Scilit:
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