Cavity Formation in Simox Structures
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We have investigated the effect of different implantation parameters on cavity formation in the top Si layer in SIMOX structures. Cavities were found to occur in the temperature range between 600 and 675°C. The nucleation and growth kinetics of cavities could be reasonably explained using classical theory, and showed a behavior similar to that of irradiation-induced voids in metals. A similar dependence on instantaneous current and beam scanning frequency was also observed. Post implantation annealing at a temperature of 1150°C for 80 min showed cavities starting to facet, and a threading dislocation density of < 105 cm2. SIMOX structures formed in (111) silicon are also presented.Keywords
This publication has 11 references indexed in Scilit:
- Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into SiliconMRS Proceedings, 1987
- High-Quality SOI by Oxygen Implantation into SiliconMRS Proceedings, 1987
- Ordering of oxide precipitates in oxygen implanted siliconApplied Physics Letters, 1986
- High-temperature annealing of implanted buried oxide in siliconJournal of Applied Physics, 1986
- SiO2 buried layer formation by subcritical dose oxygen ion implantationApplied Physics Letters, 1986
- Microstructure of high-temperature annealed buried oxide silicon-on-insulatorApplied Physics Letters, 1986
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Characterization and Evolution of Microstructures Formed by High Dose Oxygen Implantation of silicontMRS Proceedings, 1986
- Microstructure of silicon implanted with high dose oxygen ionsApplied Physics Letters, 1985
- Influence of substrate temperature on the formation of buried oxide and surface crystallinity during high dose oxygen implantation into SiApplied Physics Letters, 1984