Optical characterization of nonuniform electric fields in multiple quantum well diodes
- 10 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2) , 173-175
- https://doi.org/10.1063/1.102112
Abstract
Low‐temperature photocurrent and photoluminescence spectroscopies have been used to quantify the effects of electric field nonuniformities (on the order of 100 kV/cm) within the ∼1‐μm‐thick intrinsic regions of GaAs/AlGaAs multiple quantum well p‐i‐n photodiodes. The smearing out of excitonic spectral features due to nonuniform fields agrees well with the results of calculations performed using a single‐band envelope‐function approximation together with a standard depletion model for a p−/n+ junction.Keywords
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