Mechanical Damage Gettering Effect in Si
- 1 November 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (11) , 2097-2104
- https://doi.org/10.1143/jjap.20.2097
Abstract
The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.Keywords
This publication has 10 references indexed in Scilit:
- Lifetime control in silicon through impact sound stressingPhysica Status Solidi (a), 1977
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- Shrinkage and annihilation of stacking faults in siliconJournal of Vacuum Science and Technology, 1977
- Elimination of Process‐Induced Stacking Faults by Preoxidation Gettering of Si Wafers: II . ProcessJournal of the Electrochemical Society, 1976
- Elimination of Oxidation‐Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers: I . Phosphorus Diffusion‐Induced Misfit DislocationsJournal of the Electrochemical Society, 1975
- Elimination of Stacking Faults in Silicon Wafers by HCl Added Dry O2OxidationJapanese Journal of Applied Physics, 1975
- Oxidation-induced stacking faults in silicon. II. Electrical effects in P N diodesJournal of Applied Physics, 1974
- Dislocation Etch for (100) Planes in SiliconJournal of the Electrochemical Society, 1972
- A Cause and Cure of Stacking Faults in Silicon Epitaxial LayersJournal of Applied Physics, 1967
- Characteristics of the {111}Surfaces of the III–V Intermetallic CompoundsJournal of the Electrochemical Society, 1961