The influence of mobility unbalance on GaN based vertical cavity surface emitting lasers
- 14 April 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 92 (15) , 151116
- https://doi.org/10.1063/1.2913203
Abstract
In this work, we discuss the influence of the large mobility difference between electrons and holes on the electrical injection properties of GaN based vertical cavity surface emitting lasers. This mobility unbalance is mainly responsible for the unfocusing of the electron and hole radiative recombination in the central region of the device where the electromagnetic field is confined.Keywords
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