A New Method for the Simultaneous Analysis of I-V/T and C-V/T Measurements of an Au/P-Inp Epitaxial Schottky Diode
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layerSolid-State Electronics, 1992
- Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pressionCanadian Journal of Physics, 1991
- Analysis of Si Schottky Barrier Characteristics Based on a New Interfacial Layer ModelJapanese Journal of Applied Physics, 1991
- Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctionsJournal of Applied Physics, 1990
- A simple technique for measuring the interface-state density of the Schottky barrier diodes using the current-voltage characteristicsJournal of Applied Physics, 1987
- Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparationSolid-State Electronics, 1985
- Interfacial layer-thermionic-diffusion theory for the Schottky barrier diodeJournal of Applied Physics, 1982
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Theory of tunneling into interface statesSolid-State Electronics, 1970