Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−x barriers
- 1 January 1987
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 16 (1) , 87-91
- https://doi.org/10.1007/bf02667795
Abstract
No abstract availableKeywords
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