Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition
- 1 March 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3) , 287-289
- https://doi.org/10.1007/s11664-999-0028-8
Abstract
No abstract availableKeywords
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