Challenges to manufacturing submicron, ultra-large scale integrated circuits
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 78 (11) , 1687-1705
- https://doi.org/10.1109/5.63298
Abstract
No abstract availableThis publication has 45 references indexed in Scilit:
- High rate magnetron RIE of thick polyimide films for advanced computer packaging applicationsJournal of Electronic Materials, 1989
- A High Resolution Electron Microscopy Study of the Fine Structure in a Trench CapacitorJournal of the Electrochemical Society, 1989
- Process uniformity and slip dislocation patterns in linearly ramped-temperature transient rapid thermal processing of siliconIEEE Transactions on Semiconductor Manufacturing, 1989
- Low-temperature reactive ion etching and microwave plasma etching of siliconApplied Physics Letters, 1988
- Thin Silicon Dioxide Using the Rapid Thermal Oxidation (RTO) Process for Trench CapacitorsJournal of the Electrochemical Society, 1988
- Rapid thermal anneal induced effects in polycrystalline silicon gate structuresApplied Physics Letters, 1987
- Boron diffusion in siliconIEEE Transactions on Electron Devices, 1985
- The interdependence of geometrical, thermal, and electrical limitations for VLSI logicIEEE Journal of Solid-State Circuits, 1981
- 1 /spl mu/m MOSFET VLSI technology. I. An overviewIEEE Journal of Solid-State Circuits, 1979
- 1 /spl mu/m MOSFET VLSI technology. VI. Electron-beam lithographyIEEE Journal of Solid-State Circuits, 1979